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IRFZ44R, SiHFZ44R
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 67 18 25 Single
D
FEATURES
60 0.028
Advanced Process Technology Ultra Low On-Resistance Available Dynamic dV/dt Rating RoHS* COMPLIANT 175 C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ44/SiHFZ44 for Linear/Audio Applications * Lead (Pb)-free Available
* * * * * * *
TO-220
DESCRIPTION
G
S G D S N-Channel MOSFET
Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220 IRFZ44RPbF SiHFZ44R-E3 IRFZ44R SiHFZ44R
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Gate-Source Voltage Continuous Drain VGS at 10 V Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation TC = 25 C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range for 10 s Soldering Recommendations (Peak Temperature)d Mounting Torque Currente TC = 25 C TC = 100 C SYMBOL VGS ID IDM EAS PD dV/dt TJ, Tstg LIMIT 20 50 36 200 1.0 100 150 4.5 - 55 to + 175 300 10 1.1 UNIT V A W/C mJ W V/ns C lbf * in N*m
6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 C, L = 44 H, RG = 25 , IAS = 51 A (see fig. 12). c. ISD 51 A, dV/dt 250 A/s, VDD VDS, TJ 175 C. d. 1.6 mm from case. e. Current limited by the package, (die current = 51 A). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91292 S-Pending-Rev. A, 17-Jul-08
WORK-IN-PROGRESS
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IRFZ44R, SiHFZ44R
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.50 MAX. 62 1.0 C/W UNIT
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs
VGS = 0 V, ID = 250 A Reference to 25 C, ID = 1 mA VDS = VGS, ID = 250 A VGS = 20 VDS = 60 V, VGS = 0 V VDS = 48 V, VGS = 0 V, TJ = 150 C VGS = 10 V ID = 31 Ab VDS = 25 V, ID = 31 Ab
60 2.0 15
0.060 -
4.0 100 25 250 0.028 -
V V/C V nA A S
Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
-
1900 920 170 14 110 45 92 4.5 7.5
67 18 25 nH ns nC pF
VGS = 10 V
ID = 51 A, VDS = 48 V, see fig. 6 and 13b
-
VDD = 30 V, ID = 51 A, RG = 9.1 , RD = 0.55 , see fig. 10b
-
Between lead, 6 mm (0.25") from package and center of die contact
D
-
G
S
-
120 0.53
50c A 200 2.5 180 0.80 V ns C
G
S
TJ = 25 C, IS = 51 A, VGS = 0 Vb TJ = 25 C, IF = 51 A, dI/dt = 100 A/sb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. c. Current limited by the package (die current = 51 A).
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Document Number: 91292 S-Pending-Rev. A, 17-Jul-08
IRFZ44R, SiHFZ44R
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.5
ID = 51A
2.0
1.5
1.0
0.5
0.0 -60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( C)
Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91292 S-Pending-Rev. A, 17-Jul-08
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IRFZ44R, SiHFZ44R
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
ID , Drain Current (A)
100
100us
1ms 10
10ms
1
TC = 25 C TJ = 175 C Single Pulse
1 10 100 1000
VDS , Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
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Document Number: 91292 S-Pending-Rev. A, 17-Jul-08
IRFZ44R, SiHFZ44R
Vishay Siliconix
RD
60
VDS
LIMITED BY PACKAGE
50
RG
VGS
D.U.T. + - VDD
ID , Drain Current (A)
40
10 V
Pulse width 1 s Duty factor 0.1 %
30
Fig. 10a - Switching Time Test Circuit
20
VDS 90 %
10
0
25
50
75
100
125
150
175
TC , Case Temperature ( C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
10
10 % VGS td(on) tr td(off) tf
Fig. 10b - Switching Time Waveforms
Thermal Response(Z thJC )
1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 1 10
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
VDS tp
VDS
L
Driver
RG 20 V tp
D.U.T IAS 0.01
+ A - VDD
IAS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91292 S-Pending-Rev. A, 17-Jul-08
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IRFZ44R, SiHFZ44R
Vishay Siliconix
EAS , Single Pulse Avalanche Energy (mJ)
250
200
ID 21A 36A BOTTOM 51A TOP
150
100
50
0 25 50 75 100 125 150 175
Starting T J, Junction Temperature ( C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T.
50 k 12 V 0.2 F 0.3 F
VGS QGS
QG
QGD D.U.T.
+ -
VDS
VG
VGS
3 mA
Charge
IG ID Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91292 S-Pending-Rev. A, 17-Jul-08
IRFZ44R, SiHFZ44R
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T
+
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
+ +
-
RG
* * * *
dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test
+ VDD
Driver gate drive P.W. Period D=
P.W. Period VGS = 10 V*
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
VDD
Re-applied voltage Inductor current
Body diode forward drop
Ripple 5 %
ISD
* VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91292.
Document Number: 91292 S-Pending-Rev. A, 17-Jul-08
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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